Probing Co/Si interface behaviour by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM)

作     者：PAN J. S. LIU R. S. TOK E. S. 

作者机构：Institute of Materials Research and Engineering 3 Research Link Singapore 117602 Department of Physics National University of Singapore Kent Ridge Singapore 119260 

出 版 物：《Nuclear Science and Techniques》 (核技术（英文）)

年 卷 期：2006年第17卷第4期

页      面：202-211页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0807[工学-动力工程及工程热物理] 080501[工学-材料物理与化学] 0827[工学-核科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0803[工学-光学工程] 0702[理学-物理学] 0801[工学-力学（可授工学、理学学位）] 

主　　题：钴 硅 金属-半导体界面反应 X射线光电子光谱学 原子力显微镜方法 表面形态 

摘      要：In this work, we investigate the Co-Si reaction, the Co growth mode at room temperature, diffusion be- haviour as well as morphology evolution during annealing on both H-terminated and clean Si(001) and Si(111) sur- faces. From in-situ X-ray photoelectron spectroscopy (XPS) investigation, “Co-Si reaction appears to occur on both H-terminated and clean surfaces at room temperature (RT) and the silicide crystallinity is improved upon annealing. Co growth mode on H-terminated Si surfaces occurs in a pseudo layer-by-layer manner while small close-packed is- land growth mode is observed on the clean Si surface. Upon annealing at different temperatures, Co atom concentra- tion decreases versus annealing time, which in part is attributed to Co atoms inward diffusion. The diffusion behav- iour on both types of surfaces demonstrates a similar trend. Morphology study using ex-situ atomic force microscopy (AFM) shows that the islands formed on Si(001) surface after annealing at 700 °C are elongated with growth direc- tions alternate between the two perpendicular [ 110 ] and [110] directions. Triangular islands are observed on Si (111) surface.