Optical Properties of Atomic Defects in Hexagonal Boron Nitride Flakes under High Pressure

作     者：Xiao-Yu Zhao Jun-Hui Huang Zhi-Yao Zhuo Yong-Zhou Xue Kun Ding Xiu-Ming Dou Jian Li Bao-Quan Sun 赵晓宇;黄君辉;卓志瑶;薛永洲;丁琨;窦秀明;刘剑;孙宝权

作者机构：State Key Laboratory for Superlattices and MicrostructuresInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083 College of Materials Science and Optoelectronic TechnologyUniversity of Chinese Academy of SciencesBeijing 100049 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2020年第37卷第4期

页      面：53-56页

核心收录：

学科分类：081704[工学-应用化学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 070301[理学-无机化学] 0702[理学-物理学] 

基　　金：Supported by the Postdoctoral Science Foundation of China under Grant No.Y8T0111001 

主　　题：defect hexagonal boron 

摘      要：We investigate the pressure spectral characteristics and the effective tuning of defect emissions in hexagonal boron nitride(hBN) at low temperatures using a diamond anvil cell(DAC). It is found that the redshift rate of emission energy is up to 10 meV/GPa, demonstrating a controllable tuning of single photon emitters through *** on the distribution character of pressure coefficients as a function of wavelength, different kinds of atomic defect states should be responsible for the observed defect emissions.