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Photoluminescence Characterization of NASICON Material

Photoluminescence Characterization of NASICON Material

作     者:Yuehua He~1 Baofu Quan~1 Ying Wang~2 Chuanhui Cheng~1 Fengmin Liu~1 Biao Wang (1.College of Electronic Science and Engineering,Jilin University,Changchun 130012,China) (2.School of Materials Science and Engineering,Dalian Jiaotong University,Dalian 116028,China) 

出 版 物:《稀有金属材料与工程》 (Rare Metal Materials and Engineering)

年 卷 期:2006年第S3期

页      面:535-537页

核心收录:

学科分类:08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 

主  题:photoluminescence NASICON luminescent intensity wavelength 

摘      要:Besides gas sensitivity,NASICON (Na super ion conductor) material has luminescence *** this paper,the photoluminescence properties of NASICON and doped-NASICON material are *** NASICON material was synthesized by conventional sol-gel process,and doped with Er2O3,Tm2O3,Dy2O3,CsCl by 1%,3%,5% (mass ratio),*** ultraviolet light (325 nm,He-Cd laser) excited luminescent emissions of the resulted powders are recorded *** in the 330 nm to 650 nm *** main peak of the pure NASICON is found at the wavelength of 474 nm (blue light),the transition energy is 2.616 *** luminescent intensity is weakened obviously after doping with Er2O3and Tm2O3,but is increased after doping with Dy2O3and 3% CsCl.

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