Simplification of the Plasma Load of Negative-Pulse-Bias Source Used in Arc Ion Plating
Simplification of the Plasma Load of Negative-Pulse-Bias Source Used in Arc Ion Plating作者机构：Department of Electrical and Electronics Engineering Dalian University of Technology Dalian 116024 China Department of Electrical and Electronics Engineering Dalian University of Technology Dalian 116024 China State Key Laboratory for Materials Modification by Laser Ion and Electron Beams Dalian University of TechnologyDalian 116024 China State Key Laboratory for Materials Modification by Laser Ion and Electron Beams Dalian University of TechnologyDalian 116024 China
出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)
年 卷 期：2003年第19卷第z1期
页 面：97-98页
核心收录：
学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）]
主 题：Vacuum arc ion plating, Negative-pulse-bias, Plasma load
摘 要：Based on the voltage and current fluctuating phenomenon in the arc plasma load under the negative-pulse-bias, usingthe plasma physics theory and analysis of computer simulation expatiates that the nature of plasma load in vacuumarc plasma is a capacitance load caused by plasma sheath and can be simplified as a parallel unit composed of acapacitor and a resistor, which have exact and quantitative description in the plasma physics theory. It concludes thevalues of capacitance and resistance are thousand PF and hundred ohm from the result of simulation and *** a result, this has solved the key theoretical issues for the design of negative-pulse-bias source specifically used forvacuum arc ion plating.
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