Nanoscale control of grain boundary potential barrier, dopant density and filled trap state density for higher efficiency perovskite solar cells
作者机构:Department of Electrical Engineering and Computer ScienceCenter for Advanced Photovoltaics and Sustainable EnergySouth Dakota State UniversityBrookingsSouth Dakota Physics DepartmentDamietta UniversityNew Damietta CityEgypt Global Innovative Center for Advanced NanomaterialsFaculty of EngineeringThe University of NewcastleCallaghanNew South WalesAustralia College of Biochemical EngineeringAnhui Polytechnic UniversityWuhuChina Shanghai Electrochemical Energy Devices Research CenterSchool of Chemistry and Chemical EngineeringState Key Laboratory of Metal Matrix CompositesShanghai Jiao Tong UniversityShanghaiChina Tianjin Key Laboratory of Organic Solar Cells and Photochemical ConversionDepartment of Applied ChemistryTianjin University of TechnologyTianjinChina
出 版 物:《InfoMat》 (信息材料(英文))
年 卷 期:2020年第2卷第2期
页 面:409-423页
核心收录:
学科分类:08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
基 金:This work has been supported in part by NSF MRI(1428992) NASA EPSCoR(NNX15AM83A) U.S.-Egypt Science and Technology(S&T)Joint Fund,SDBoR R&D Program,and EDA University Center Program(ED18DEN3030025) This work is derived from the Subject Data supported in whole or part by NAS and USAID,and any opinions,findings,conclusions,or recommendations expressed in the paper are those of the authors alone,and do not necessarily reflect the views of USAID or NAS.We would like to thank Dr Brian Moore for assisting us with high performance computing facility at South Dakota State University.W.Y.acknowledges the support from International Cooperation Project of Anhui Province(1503062018) Visiting Research Scholar Project for Young/Middle Excellent Talents of Anhui Province(gxfxZD2016110) Preeminent Youth Foundation of Anhui Polytechnic University(2016JQ002)
主 题:dopant density filled trap state density grain boundary potential barrier perovskite solar cells relative humidity
摘 要:In this work,grain boundary(GB)potential barrier(ΔφGB),dopant density(Pnet),and filled trap state density(PGB,trap)were manipulated at the nanoscale by exposing the fabricated perovskite films to various relative humidity(RH)*** mapping of surface potential in the perovskite film revealed higher positive potential at GBs than inside the *** averageΔφGB,Pnet,and PGB,trap in the perovskite films decreased from 0%RH to 25%RH exposure,but increased when the RH increased to 35%RH and 45%*** clearly indicated that perovskite solar cells fabricated at 25%RH led to the lowest average GB potential,smallest dopant density,and least filled trap states *** is consistent with the highest photovoltaic efficiency of 18.16%at 25%RH among the different relative humidities from 0%to 45%RH.