Single crystal growth, structural and transport properties of bad metal RhSb2

作     者：D S Wu Y T Qian Z Y Liu W Wu Y J Li S H Na Y T Shao P Zheng G Li J G Cheng H M Weng J L Luo 吴德胜;钱玉婷;刘子懿;吴伟;李延杰;那世航;邵钰婷;郑萍;李岗;程金光;翁红明;雒建林

作者机构：Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing 100190China Songshan Lake Materials LaboratoryDongguan 523808China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2020年第29卷第3期

页      面：1-6页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.11674375,11634015,11925408,and 11674369) the National Basic Research Program of China(Grant Nos.2016YFA0300600,2016YFA030240,2017YFA0302901,and 2018YFA0305700) the Strategic Priority Research Program and Key Research Program of Frontier Sciences of the Chinese Academy of Sciences(Grant Nos.QYZDB-SSW-SLH013,XDB28000000,and XXH13506-202) the Science Challenge Project of China(Grant No.TZ2016004) the K.C.Wong Education Foundation,China(Grant No.GJTD-2018-01) the Beijing Natural Science Foundation,China(Grant No.Z180008) the Beijing Municipal Science and Technology Commission,China(Grant No.Z181100004218001) 

主　　题：single crystal growth ab-initio band calculations susceptibility heat capacity thermodynamic transport properties 

摘      要：We have successfully grown an arsenopyrite marcasite type RhSb2 single crystal, and systematically investigated its crystal structure, electrical transport, magnetic susceptibility, heat capacity, and thermodynamic properties. We found that the temperature-dependent resistivity exhibits a bad metal behavior with a board peak around 200 K. The magnetic susceptibility of RhSb2 shows diamagnetism from 300 K to 2 K. The low-temperature specific heat shows a metallic behavior with a quite small electronic specific-heat coefficient. No phase transition is observed in both specific heat and magnetic susceptibility data. The Hall resistivity measurements show that the conduction carriers are dominated by electrons with ne = 8.62 × 10^(18) cm^(-3) at 2 K, and the electron carrier density increases rapidly above 200 K without change sign. Combining with ab-initio band structure calculations, we showed that the unusual peak around 200 K in resistivity is related to the distinct electronic structure of RhSb_2. In addition, a large thermopower S(T) about -140 μV/K is observed around 200 K, which might be useful for future thermoelectric applications.