Separation and enrichment mechanism of C54–TiSi_(2) from hypoeutectic Ti–65 wt.%Si alloy during directional solidification via alternating electromagnetic fields

作     者：Kui‑song Zhu Jing‑fei Hu Wen‑hui Ma Kui‑xian Wei Yong‑nian Dai Kui-song Zhu;Jing-fei Hu;Wen-hui Ma;Kui-xian Wei;Yong-nian Dai

作者机构：The National Engineering Laboratory for Vacuum MetallurgyState Key Laboratory of Complex Nonferrous Metal Resources Clean UtilizationKunming University of Science and TechnologyKunming 650093YunnanChina College of Vanadium and TitaniumPanzhihua UniversityPanzhihua 617000SichuanChina Key Laboratory for Nonferrous Vacuum Metallurgy of Yunnan ProvinceEngineering Research Center for Silicon Metallurgy and Silicon Materials of Yunnan Provincial UniversitiesKunming University of Science and TechnologyKunming 650093YunnanChina 

出 版 物：《Journal of Iron and Steel Research International》 (J. Iron Steel Res. Int.)

年 卷 期：2021年第28卷第1期

页      面：29-37页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：This research was supported by the National Natural Science Foundation of China(No.U1702251) Special Funds of State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization(Grant No.CNMRCUTS1604) the Program for Innovative Research Team in University of Ministry of Education of China(No.IRT_17R48) Key Laboratory of Comprehensive Utilization of Vanadium and Titanium Resources in Sichuan Province(2019FTSZ06) the PhD Fund of Panzhihua University,and Funded by the State Key Laboratory of Vanadium and Titanium Resources Comprehensive Utilization 

主　　题：Ti–Si alloy Directional solidification Electromagnetic field Separation C54–TiSi2 

摘      要：The effects of directional solidification parameters and the coupling of directional solidification parameters and alternating electromagnetic fields on separation and enrichment of the C54–TiSi2 phase were investigated in a directionally solidified hypoeutectic Ti–65 wt.%Si *** results indicated that by increasing the pull-down velocity at a given position within the ingot,the cooling rate,growth rate,and temperature gradient of ingot could be *** a pull-down velocity near 5μm/s,the temperature gradient,cooling rate,and growth rate decreased with increasing the thickness of the C54–TiSi2-rich *** fields enhanced mass transfer at pull-down velocities of 5,10,15,and 20μm/s,with resulting enriched layer thicknesses of 15,10,10,and 5 mm,*** increasing the percentage of Ti in the Ti–Si alloy from 25 to 35 wt.%,the thickness of the C54–TiSi2-rich layer was increased from 2.5 to 3.3 ***,the maximum C54–TiSi2 content obtained experimentally in this layer decreased from 92.06 to 79.49 mass%.