Memristor initial-boosted coexisting plane bifurcations and its extreme multi-stability reconstitution in two-memristor-based dynamical system

作     者：BAO Han CHEN Mo WU HuaGan BAO BoCheng BAO Han;CHEN Mo;WU HuaGan;BAO BoCheng

作者机构：School of Information Science and EngineeringChangzhou UniversityChangzhou 213164China 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2020年第63卷第4期

页      面：603-613页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.51777016 51607013 61601062&61801054) 

主　　题：memristor-based system memristor initial coexisting plane bifurcations extreme multi-stability 

摘      要：Initial-dependent extreme multi-stability and offset-boosted coexisting attractors have been significantly concerned *** paper constructs a novel five-dimensional(5-D)two-memristor-based dynamical system by introducing two memristors with cosine memductance into a three-dimensional(3-D)linear autonomous dissipative *** theoretical analyses and numerical plots,the memristor initial-boosted coexisting plane bifurcations are found and the memristor initial-dependent extreme multi-stability is revealed in such a two-memristor-based dynamical system with plane ***,a dimensionality reduction model with the determined equilibrium is established via an integral transformation method,upon which the memristor initial-dependent extreme multi-stability is reconstituted theoretically and expounded ***,physically circuit-implemented PSIM(power simulation)simulations are carried out to validate the plane offset-boosted coexisting behaviors.