Fast Liquid Phase Epitaxial Growth for Perovskite Single Crystals

作     者：Yu-Wei Li Xin Wang Guan-Wen Li Yao Wu Yu-Zhu Pan Yu-Bing Xu Jing Chen Wei Lei 李雨巍;王昕;李冠文;吴瑶;潘禹竹;徐玉冰;陈静;雷威

作者机构：Joint International Research Laboratory of Information Display and VisualizationSchool of Electronic Science and EngineeringSoutheast UniversityNanjing 210096 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2020年第37卷第1期

页      面：97-100页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：the National Key R&D Program of China(Grant Nos.2017YFC0111500 and 2016YFB0401600) the National Natural Science Foundation Project(Grant Nos.61775034,61571124,and 61674029) International Cooperation Program of Jiangsu Province(Grant No.BZ2018056) the NSFC Research Fund for International Young Scientists(Grant No.61750110537) 

主　　题：Crystal perovskite epitaxial 

摘      要：Semiconductors grown by the solution-processed method have shown low-cost,facile fabrication process and comparable ***,there are many reasons why it is difficult to achieve high quality *** example,lattice constant mismatch is one of the problems when photovoltaic devices made of organ metallic *** this work,MAPbBr^(MA=CH3NH3^+)perovskites single crystals grown on the surface of MAPbBr2.5 CI0.5 perovskites single crystals via liquid epitaxial growth method is *** is found that when the lattice constants of the two perovskite single crystals are matched,another crystal can be grown on the surface of one crystal by epitaxial *** whole epitaxy growth process does not require high heating temperature and long heating time.X-ray diffraction method is used to prove the lattice plane of the substrate and the epitaxial grown layer.A scanning electron microscope is used to measure the thickness of the epitaxial *** with perovskite-based photodetectors without epitaxial growth layer,perovskite-based photodetectors with epitaxial growth layer have lower dark current density and higher optical responsibility.