Colossal Magnetoresistive p—n Junctions of Te—Doped LaMnO3／Nb—doped SrTiO3

作     者：吕惠宾 

作者机构：LaboratoryofOpticalPhysicsInstituteofPhysicsandCenterforCondensedMatterPhysicsChineseAcademyofScien 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2003年第20卷第1期

页      面：137-140页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：国家973计划 

主　　题：Manganese compounds 

摘      要：We have fabricated colossal magnetoresistive (CMR) p-n junctions made of Te-doped LaMnO3 and Nb-doped SrTiO3 with laser molecular beam epitaxy. The I-V characteristics of the La0.9Te0.1MnO3/SrNb0.01Ti0.99O3 p-n junctions as a function of applied magnetic field (0-5 T) were experimentally studied in the temperature range 77-300 K. The results indicate that the p-n junction exhibited the CMR behaviour. The magnetoresistance (MR) is positive at 220 K and 300 K, while it displays a negative MR at 77 K. For a positive bias, the MR ratios (ΔR/R0, ΔR = RH-R0) are 7.5% at 0.1 T and 18% at 5 T for 300 K, 5% at 0.1 T and 33% at 5 T for 220 K, -14% at 0.1 T and -71% at 5 T for 77 K. For a negative bias, the MR ratios are 6.3% at 0.1 T and 10.8% at 3 T for 300 K, 5.1% at 0.1 T and 15% at 3 T for 220 K, -19% at 0.1 T and -72% at 5 T for 77 K. The CMR behaviour of the p-n junction is different from those of the LaMnO3 compound family.