Microstructure and properties of ultrafine WC-10Co composites with chemically doped VC

作     者：PANG Cholsong LUO Ji GUO Zhimeng PANG Cholsong a,b,LUO Ji a,and GUO Zhimeng a a School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,China b Physics Faculty,Kim Il Sung University,Pyongyang,Democratic People’s Republic of Korea

作者机构：School of Materials Science and Engineering University of Science and Technology Beijing Beijing 100083 China Physics Faculty Kim Il Sung University Pyongyang Democratic People＇s Republic of Korea 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2011年第30卷第2期

页      面：183-188页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：composite materials tungsten carbide cobalt grain growth doping densification mechanical properties 

摘      要：Vanadium carbide is the most effective grain growth inhibitor for ultrafine WC-Co composites due to its high solubility and mobility in the cobalt phase at relatively low temperatures; however, there are still some debates over the best way to introduce it into the WC-Co formula- tion. In this paper, the differences between admixed and chemically doped grain growth inhibitors on the microstructural development and properties of an ultrafine WC-IOCo composite are discussed. The densification rate of chemically doped samples is slower in the early stage of sintering and the WC grain sizes of the sintered alloys are finer than those of admixed samples, leading to the increase of hardness and transverse rupture strength of the sintered alloys. The effectiveness of the chemically doped inhibitor is attributed to the formation of vana- dium rich layers on the surfaces of tungsten carbide powders during reduction and carbonization, which alters the surface and interface energies of WC grains, impedes the contact with each other of WC grains and contributes to the resistance to W diffusion across the layer during sintering, resulting in the inhibition of nanosized particle coalescence.