Structural and Raman Analysis of Antimony-Implanted ZnMnO Films

作     者：柯贤文 单福凯 王广甫 刘传胜 付德君 

作者机构：Accelerator Laboratory Department of Physics and Department of Printing and PackagingWuhan University Growing Base for State Key Laboratory Qingdao University Key Laboratory of Beam Technology and Material Modification of Ministry of EducationBeijing Normal University 

出 版 物：《Plasma Science and Technology》 (等离子体科学和技术（英文版）)

年 卷 期：2010年第12卷第1期

页      面：92-94页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by National Natural Science Foundation of China(Nos. 10675095  10875090) 

主　　题：Sb ion implantation ZnMnO structure Raman scattering 

摘      要：Antimony ions were implanted into ZnMnO films grown on silicon （Si） by radio- frequency magnetron sputtering. The implanted samples were treated by rapid thermal annealing and investigated by X-ray photoelectron spectroscopy, X-ray diffraction and Raman scattering. In the wurtzite of ZnMnO, both manganese （Mn） and stibium （Sb） substituted the lattice position of zinc （Zn）. The ZnMnO films were characterized by Raman scattering at 522 cm-1, attributed to a local vibration of Mn. After implantation with Sb ions, two new peaks 681 cm^-1 and 823 cm^-1 were observed in the ZnMnO films, as a result of ion-induced damage to the lattice.