Inverse Stone-Thrower-Wales defect and transport properties of 9AGNR double-gate graphene nanoribbon FETs

作     者：Mohammad Bagher NASROLLAHNEJAD Parviz KESHAVARZI Mohammad Bagher NASROLLAHNEJAD;Parviz KESHAVARZI

作者机构：Electrical and Computer Engineering Department Semnan University 

出 版 物：《Journal of Central South University》 (中南大学学报（英文版）)

年 卷 期：2019年第26卷第11期

页      面：2943-2952页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：inverse Stone-Thrower-Wales defect electronic transport properties graphene nanoribbon tight binding NEGF formalism 

摘      要：Defect-based engineering of carbon nanostructures is becoming an important and powerful method to modify the electron transport properties in graphene nanoribbon FETs. In this paper, the impact of the position and symmetry of the ISTW defect on the performance of low dimensional 9AGNR double-gate graphene nanoribbon FET (DG-GNRFET) is investigated. Analyzing the transmission spectra, density of states and current-voltage characteristics shows that the defect effect on the electron transport is considerably varied depending on the positions and the orientations (the symmetric and asymmetric configuration) of the ISTW defect in the channel length. Based on the results, the asymmetric ISTW defect leads to a more controllability of the gate voltages over drain current, and drain current increases more than 5 times. The results have also con rmed the ISTW defect engineering potential on controlling the channel electrical current of DG-AGNR FET.