Antireflection properties and solar cell application of silicon nanoscructures

作     者：岳会会 贾锐 陈晨 丁武昌 武德起 刘新宇 

作者机构：Key Laboratory of Microwave Devices and Integrated CircuitsInstitute of MicroelectronicsChinese Academy of Sciences 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2011年第32卷第8期

页      面：55-60页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 08[工学] 070205[理学-凝聚态物理] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Project supported by the State Key Development Program for Basic Research of China(Nos.2006CB604904,2009CB939703) the National Natural Science Foundation of China(Nos.60706023,90401002,60977050,90607022) the Chinese Academy of Solar Energy Action Plan(No.YZ0635) 

主　　题：antireflection properties silicon nanowires solar cells passivation 

摘      要：Silicon nanowire arrays（SiNWAs） are fabricated on polished pyramids of textured Si using an aqueous chemical etching *** silicon nanowires themselves or hybrid structures of nanowires and pyramids both show strong anti-reflectance abilities in the wavelength region of 300-1000 nm,and reflectances of 2.52%and less than 8%are achieved,respectively.A 12.45%SiNWAs-textured solar cell（SC） with a short circuit current of 34.82 mA/cm^2 and open circuit voltage（K_（oc）） of 594 mV was fabricated on 125×125 mm^2 Si using a conventional process including metal grid *** is revealed that passivation is essential for hybrid structure textured SCs,and K_（oc） can be enlarged by 28.6%from 420 V to 560 mV after the passivation layer is *** loss mechanism of SiNWA SC was investigated in detail by systematic comparison of the basic parameters and external quantum efficiency（EQE） of samples with different fabrication *** is proved that surface passivation and fabrication of a metal grid are critical for high efficiency SiNWA SC,and the performance of SiNWA SC could be improved when fabricated on a substrate with an initial PN junction.