Structural,dielectric and electrical properties of bismuth magnesium tantalate electronic system

作     者：Sarbasri Halder Satyanarayan Bhuyan R.N.P.Choudhary Sarbasri Halder;Satyanarayan Bhuyan;R.N.P.Choudhary

作者机构：Department of Electronics and Communication EngineeringSiksha‘O’AnusandhanDeemed to be UniversityBhubaneswar 751030India Department of PhysicsSiksha‘O’AnusandhanDeemed to be UniversityBhubaneswar 751030India 

出 版 物：《Journal of Magnesium and Alloys》 (镁合金学报（英文）)

年 卷 期：2019年第7卷第4期

页      面：628-636页

核心收录：

学科分类：0806[工学-冶金工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0801[工学-力学（可授工学、理学学位）] 

主　　题：XRD Impedance spectroscopy Conductivity Conduction 

摘      要：The lead-free dielectric compound Bi(Mg2/3Ta1/3)O3(BMT)has been synthesized at high temperature by a low-cost solid-state *** X-ray diffraction(XRD)technique reveals that the fabricated sample has an orthorhombic crystal *** scanning electron microscope(SEM)image displays the uniform distribution of grains on the surface of the *** dielectric parameters(permittivity(εr),and loss tangent(tanδ)are studied over a wide range of temperature(150-500℃)and frequency(1 kHz-1 MHz).The temperature dependent conductivity plot follows Universal Johnson’s power *** complex impedance and modulus spectrum illustrate the electrical behavior of the compound at various frequency and *** Nyquist spectra show the presence of the effect of grain and grain boundary in the synthesized *** grain resistance value declines with the rise in temperature that shows the presence of a negative temperature coefficient(NTCR)behavior in the *** complex modulus spectra display the occurrence of the conduction mechanism in the *** reported compound has a relative dielectric constant and loss of 22×10^3 and 1.8 respectively at 1 kHz frequency and 500℃,thus becoming an efficient applicant for dielectric applications that can operate at higher temperatures.