Vertical Bridgman Seeded Growth of Cd_(1-x)Zn_xTe Crystals

作     者：侯清润 陈纪安 赵乐敏 张新敏 

作者机构：North China Research Inst of Electro-optics Beijing China 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：1994年第13卷第2期

页      面：126-129页

核心收录：

学科分类：0806[工学-冶金工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

主　　题：Seeded growth Vertical Bridgman method CdZnTe 

摘      要：The method of vertical Bridgman seeded growth of *** crystals was studied. This method ispromising in obtaining large size single crystals and improving the crystal structure. However, some prob-lems such as seeded growth failurc exist at present.(111)-oriented Cd_(0.96)Zn_(0.04)Te single crystal substrateswith size greater than 15×15 mm￣2 arc obtained. The FWHM ranges from 18 to 66 *** and theresistivity is greater than 10￣6 obmem.