Pressure Tolerant Power Electronics： IGBT Gate Driver for Operation in High Pressure Hydrostatic Environment
Pressure Tolerant Power Electronics： IGBT Gate Driver for Operation in High Pressure Hydrostatic Environment作者机构：Electric Power Systems SINTEF Energy Research Trondheim 7465 Norway
出 版 物：《Journal of Energy and Power Engineering》 (能源与动力工程（美国大卫英文）)
年 卷 期：2012年第6卷第9期
页 面：1500-1508页
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
主 题：Pressure tolerant power electronics IGBT gate driver voltage source converter capacitors power semiconductors.
摘 要：Abstract： This paper presents results from an on-going research project on pressure tolerant power electronics at SINTEF Energy Research, Norway. The driving force for this research is to enable power electronic components to operate in pressurized dielectric environment. The intended application is the converters for operation down to 3,000 meters ocean depth, primarily for subsea oil and gas processing. The paper focuses on the needed modifications to a general purpose gate driver for IGBT （insulated gate bipolar transistors） that will give pressure tolerance. Adaptations and modifications of the individual driver components are *** results from preliminary testing are promising, which shows that the considered adaptations give feasible solutions.
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