Study on the Forbidden Gap Width of Strained Epitaxial Lead Selenide Layers by Optical Transmission

作     者：A. M. Pashaev O. I. Davarashvili Z. G. Akhvlediani 

作者机构：National Aviation Academy of Azerbaijan Iv. Javakhishvili Tbilisi State University E. Andronikashvili Institute of Physics 

出 版 物：《材料科学与工程（中英文B版）》 (Journal of Materials Science and Engineering B)

年 卷 期：2012年第2卷第2期

页      面：142-150页

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

主　　题：禁带宽度 硒化铅 应变层 光传输 吸收系数 光纤传输 光子能量 双向拉伸 

摘      要：When studying the optical transmission of thin epitaxial lead selenide layers, the characterization of their parameters such as the index of refraction, and the reflection and absorption coefficients was performed. The forbidden gap width, mainly which increases as decreases the layer thickness, was determined by straightening of the absorption coefficients squared versus the photon energy. Along with the increase in the tangential lattice constant in strained layers, this fact confirms the realization of effective negative pressure in the layers (of biaxial stretching).