AC impedance study on semiconducting properties,of anodic plumbous oxide film

作     者：PU,Cong HE Zhuo-Li LIU Hou-Tian CHEN Xia-Lin ZHOU Wei-Fang Department of Chemistry,Fudan University,Shanghai 200433 

作者机构：Department of Chemistry Fudan University Shanghai 200433 

出 版 物：《Chinese Journal of Chemistry》 (中国化学（英文版）)

年 卷 期：1990年第8卷第5期

页      面：396-404页

核心收录：

学科分类：07[理学] 0703[理学-化学] 

基　　金：This work was supported by the Chinese State Education Commission the National Natural Science Foundation of China 

主　　题：impedance anodic Schottky latter relaxation donor dense battery Conway dissolution 

摘      要：The semiconducting properties of anodic film formed on Pb in ***^(-3)H_2SO_4 solu- tion(30℃)at 0.9 V(***/Hg_2SO_4)for 2 h were studied using AC impedance *** phase composition of the film is PbSO_4 and ***_*** semiconducting properties are due to the latter. The Mott-Schottky plots show that the said film is an n-type semiconductor with flat-band potential of-0.9 V(***/Hg_2SO_4)and donor density of 1×10^(16)cm^(-3).The surface density measured at 410—2500 Hz is(2—5)×10^(12)cm^(-2)eV^(-1).