Electric-stress reliability and current collapse of different thickness SiN_x passivated AlGaN/GaN high electron mobility transistors

作     者：杨凌 胡贵州 郝跃 马晓华 全思 杨丽媛 姜守高 

作者机构：Key Laboratory for Wide Band-Gap Semiconductor Materials and DevicesSchool of MicroelectronicsXidian University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2010年第19卷第4期

页      面：369-374页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the State Key Program of National Natural Science Foundation of China (Grant No. 60736033) 

主　　题：SiNx passivated AlGaN/GaN high electron mobility transistors degradation current collapse surface states 

摘      要：This paper investigates the impact of electrical degradation and current collapse on different thickness SiNx passivated AlGaN/GaN high electron mobility transistors. It finds that higher thickness SiNx passivation can significantly improve the high-electric-field reliability of a device. The degradation mechanism of the SiNx passivation layer under ON-state stress has also been discussed in detail. Under the ON-state stress, the strong electric-field led to degradation of SiNx passivation located in the gate-drain region. As the thickness of SiNx passivation increases, the density of the surface state will be increased to some extent. Meanwhile, it is found that the high NH3 flow in the plasma enhanced chemical vapour deposition process could reduce the surface state and suppress the current collapse.