Electrical characterization of the organic semiconductor Ag/CuPc/Au Schottky diode

作     者：Mutabar Shah M.H.Sayyad Kh.S.Karimov 

作者机构：Ghulam Ishaq Khan Institute of Engineering Sciences and Technology physical Technical Institute of Academy of Sciences 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2011年第32卷第4期

页      面：52-56页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：GIK Institute of Engineering Sciences and Technology for its support the Indigenous PhD Fellowship Program 

主　　题：Schottky diode copper phthalocyanine thin film organic semiconductor mobility 

摘      要：This paper reports on the fabrication and investigation of a surface-type organic semiconductor copper phthalocyanine（CuPc） based diode.A thin film of CuPc of thickness 100 nm was thermally sublimed onto a glass substrate with preliminary deposited metallic electrodes to form a surface-type Ag/CuPc/Au Schottky *** current-voltage characteristics were measured at room temperature under dark *** barrier height was calculated as 1.05 *** values of mobility and conductivity was found to be 1.74×10;cm;/（V·s） and 5.5×10;Ω;·cm;,*** low voltages the device showed ohmic conduction and the space charge limited current conduction mechanisms were dominated at higher voltages.