Two-dimensional pixel image lag simulation and optimization in a 4-T CMOS image sensor

作     者：于俊庭 李斌桥 于平平 徐江涛 牟村 

作者机构：School of Electronics Information EngineeringTianjin University Logistics Management OfficeHebei University of Technology 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2010年第31卷第9期

页      面：59-63页

核心收录：

学科分类：080202[工学-机械电子工程] 08[工学] 080203[工学-机械设计及理论] 0802[工学-机械工程] 

基　　金：supported by the National Natural Science Foundation of China(Nos.60806010,60976030) the Tianjin Innovation Special Funds for science and Technology,China(No.05FZZDGX00200) 

主　　题：image lag two-dimensional simulation doping dose implant tilt CMOS image sensor 

摘      要：Pixel image lag in a 4-T CMOS image sensor is analyzed and simulated in a two-dimensional *** of reducing image lag are discussed from transfer gate channel threshold voltage doping adjustment,PPD N-type doping dose/implant tilt adjustment and transfer gate operation voltage adjustment for signal electron *** the computer analysis tool ISE-TCAD,simulation results show that minimum image lag can be obtained at a pinned photodiode n-type doping dose of 7.0×10^12 cm^-2,an implant tilt of -2°,a transfer gate channel doping dose of 3.0×10^12 cm^-2 and an operation voltage of 3.4 *** conclusions of this theoretical analysis can be a guideline for pixel design to improve the performance of 4-T CMOS image sensors.