Identifying the failure mechanism in accelerated life tests by two-parameter lognormal distributions

作     者：郭春生 张燕峰 万宁 朱慧 冯士维 

作者机构：College of Electronic Information and Control Engineering Beijing University of Technology 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2014年第35卷第8期

页      面：110-114页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China(No.61204081) the Research Project in Guangdong Province,China(No.2011B090400463) the Guangdong Provincial Science and Technology Major Project of the Ministry of Science and Technology of China(Nos.2011A080801005,2012A080304003) 

主　　题：Arrhenius model accelerated life tests failure mechanisms lognormal distribution 

摘      要：The failure mechanism stimulated by accelerated stress in the degradation may be different from that under normal conditions, which would lead to invalid accelerated life tests. To solve the problem, we study the re- lation between the Arrhenius equation and the lognormal distribution in the degradation process. Two relationships of the lognormal distribution parameters must be satisfied in the conclusion of the unaltered failure mechanism, the first is that the logarithmic standard deviations must be equivalent at different temperature levels, and the second is that the ratio of the differences between logarithmic means must be equal to the ratio of the differences between reciprocals of temperature. The logarithm of distribution lines must simultaneously have the same slope and regular interval lines. We studied the degradation of thick-film resistors in MCM by accelerated stress at four temperature levels （390, 400, 410 and 420 K）, and the result agreed well with our method.