Investigation of the Imaging Polarization Effect Based on a Pixellated CdZnTe Detector

作     者：黎淼 肖沙里 张流强 曹玉琳 陈宇晓 沈敏 王玺 

作者机构：Key Laboratory of Optoelectronic Technology and System (Ministry of Education) Chongqing UniversityChongqing 400030 Institude of Electronic Engineering China Academy of Engineering Physics Mianyang 621900 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2010年第27卷第7期

页      面：58-60页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 082704[工学-辐射防护及环境保护] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0827[工学-核科学与技术] 

基　　金：国家自然科学基金 

主　　题：POLARIZATION (Nuclear physics) PIXELS METAL detectors CADMIUM compounds GAMMA ray sources IMAGING systems 

摘      要：A pixel array CdZnTe imaging system, employing a 40 × 40× 5 mm^3 pixellated CdZnTe detector, is established. The imaging polarization effect in the CdZnTe pixellated detector for a collimated CS137 Gamma source is investigated in detail. The experimental results for different irradiated fluxes indicate that excessive irradiated flux indeed causes central pixels to be shut off completely. The imaging performance of the polarized detector is severely degraded. Polarized detector counts are simultaneously reduced to one-third of the non-polarized detector counts. A theoretical model of potential distribution is also proposed by solving the Poisson equation and, in turn, the electric potential distortion for high irradiated flux is discussed by comparison with the experimental results.