Semiconducting properties of aluminum-doped ZnO thin films grown by spray pyrolysis technique

作     者：M.A.Mahadik Y.M.Hunge S.S.Shinde K.Y.Rajpure C.H.Bhosale 

作者机构：Electrochemical Materials Laboratory Department of Physics Shivaji University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2015年第36卷第3期

页      面：23-28页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：University Grants Commission, New Delhi for the financial support through the UGC Major Research Project No.39-466/2010(SR) the support from UGC-DRS-I, DST-FIST schemes of Department of Physics 

主　　题：aluminum zinc oxide structural morphological and dielectrical properties 

摘      要：Highly transparent and preferential c-axis oriented nanocrystalline undoped and A1 doped zinc oxide （AZO） thin films have been deposited onto amorphous glass substrate by spray pyrolysis. The XRD studies reveal that AZO with a hexagonal （wurtzite） crystal structure having （002） preferred orientation is formed. The atomic force microscope （AFM） shows uniform surface topography. The optical band gap values of undoped and AZO thin films were changed from 3.34 to 3.35 eV. The band gap energy and photoluminescence are found to depend on the Al doping. Thermoelectric power measurement shows film having n-type in nature. Dielectric constant and loss （tan δ） were found to be frequency dependent. Interparticle interactions in the deposited films are studied by complex impendence spectroscopy.