Spin synthesis of monolayer of SiO_2 thin films

作     者：S.S.Shinde S.Park J.Shin 

作者机构：Korea Research Institute of Standards and Science 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2015年第36卷第4期

页      面：16-25页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：thin films spin synthesis electron microscopy 

摘      要：The highly ordered monolayer of submicron size silica （SiO2） particles （235 nm） is developed on p-silicon by using three-step spin-coating in colloidal suspension, which has significant potential in various applications. The influence of three-step spin speeds, spinning time, acceleration time between different steps, concentration of SiO2 particles in the solution, solution quantity, and the ambient humidity （relative humidity） on the properties ofmonolayer SiO2 are studied in order to achieve a large area monolayer film. A relatively high surface coverage and uniform monolayer film of SiO2 particles in the range of 85%-90% are achieved by appropriate control of the preparative parameters. We conclude that this method can be useful in industrial applications, because of the fabrication speed, surface coverage and cost of the process.