Strain distribution and electronic structures of the InAs/GaAs quantum ring molecule in an applied electric field
Strain distribution and electronic structures of the InAs/GaAs quantum ring molecule in an applied electric field作者机构：Ministry of Education Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications) Beijing China
出 版 物：《Science China(Physics,Mechanics & Astronomy)》 (中国科学：物理学、力学、天文学（英文版）)
年 卷 期：2010年第53卷第9期
页 面：1594-1599页
核心收录：
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学]
基 金：supported by the National High Technology Research and Development Program of China (Grant No 2009AA03Z405) the National Natural Science Foundation of China (Grant Nos 60908028 and 60971068) the High School Innovation and Introducing Talent Project of China (Grant No B07005)
主 题：strain distribution electronic structure quantum ring molecule applied electric field
摘 要：The strain distribution and electronic structures of the InAs/GaAs quantum ring molecule are calculated via the finite element *** our model,three identical InAs quantum rings are aligned vertically and embedded in the cubic GaAs *** the band edge modification induced by the strain,the electronic ground state and the dependence of ground state energy on geometric parameters of the quantum ring molecule are *** change of localization of the wavefunction resulting from the applied electric field along the growth direction is *** ground state energy decreases as the electric field intensity increases in a parabolic-like *** electric field changes the monotonic dependence of the energy level on the inter-ring distance into a non-monotonic ***,the electric field has no effect on the relationships between the energy level and other geometric parameters such as the inner radius and outer radius.
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