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Time-space multiplexed photonic-electronic digital multiplier

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Photonics Research 2024年第3期12卷 499-504页

作者： WENKAI ZHANG BO WU WENTAO GU JUNWEI CHENG HAILONG ZHOU LIAO CHEN WENCHAN DONG JIANJI DONG XINLIANG ZHANG Wuhan National Laboratory for Optoelectronics Huazhong University of Science and TechnologyWuhan 430074China

Optical computing has shown immense application prospects in the post-Moore era.However,as a crucial component of logic computing,the digital multiplier can only be realized on a small scale in optics,restrained by the limited functionalities and inevitable loss of optical nonlinearity.In this paper,we propose a time-space multiplexed architecture to realize large-scale photonic-electronic digital multiplication.

关键词： multiplier electronic restrained

electronic and mechanical responses of two-dimensional HfS2,HfSe2,ZrS2,and ZrSe2 from first-principles

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Frontiers of Structural and Civil Engineering 2019年第2期13卷 486-494页

作者： Mohammad SALAVATI Institute of Structural Mechanics Bauhaus-Universitat WeimarD-99423 WeimarGermany

During the last decade, numerous high-quality two-dimensional (2D) materials with semiconducting electronic character have been synthesized. Recent experimental study (Sci. Adv. 2017;3: el700481) nevertheless confirmed that 2D ZrSe2 and HfSe2 are among the best candidates to replace the silicon in nanoelectronics owing to their moderate band-gap. We accordingly conducted first-principles calculations to explore the mechanical and electronic responses of not only ZrSe2 and HfSe2, but also ZrS? and HfS? in their single-layer and free-standing form. We particularly studied the possibility of engineering of the electronic properties of these attractive 2D materials using the biaxial or uniaxial tensile loadings. The comprehensive insight provided concerning the intrinsic properties of HfS2, HfSe2, ZrS2, and ZrSc? can be usefiil for their future applications in nanodevices.

关键词： 2D materials mechanical electronic DFT

electronic structure and spatial inhomogeneity of iron-based superconductor FeS

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Chinese Physics B 2020年第4期29卷 110-115页

作者：王成玮王美晓姜娟杨海峰杨乐仙史武军赖晓芳 Sung-Kwan Mo Alexei Barinov 颜丙海刘志黄富强贾金峰柳仲楷陈宇林 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology(SIMIT)Chinese Academy of SciencesShanghai 200050China School of Physical Science and Technology ShanghaiTech UniversityCAS-Shanghai Science Research CenterShanghai 200031China University of Chinese Academic of Sciences Beijing 100049China Advanced Light Source Lawrence Berkeley National LaboratoryBerkeleyCA 94720USA State Key Laboratory of Low Dimensional Quantum Physics Department of Physics and Collaborative Innovation Center for Quantum MatterTsinghua UniversityBeijing 100084China Beijing National Laboratory for Molecular Sciences and State Key Laboratory of Rare Earth Materials Chemistry and Applications College of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871China Elettra-Sincrotrone Trieste ScPA TriesteBasovizza 34149Italy Max Planck Institute for Chemical Physics of Solids D-01187 DresdenGermany State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050China Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education) Department of Physics and AstronomyShanghai Jiao Tong UniversityShanghai 200240China Physics Department Oxford UniversityOxfordOX13PUUK

Iron-based superconductor family FeX(X=S,Se,Te)has been one of the research foci in physics and material science due to their record-breaking superconducting temperature(FeSe film)and rich physical phenomena.Recently,FeS,the least studied Fe X compound(due to the difficulty in synthesizing high quality macroscopic crystals)attracted much attention because of its puzzling superconducting pairing symmetry.In this work,combining scanning tunneling microscopy and angle resolved photoemission spectroscopy(ARPES)with sub-micron spatial resolution,we investigate the intrinsic electronic structures of superconducting FeS from individual single crystalline domains.Unlike FeTe or FeSe,FeS remains identical tetragonal structure from room temperature down to 5 K,and the band structures observed can be well reproduced by our ab-initio calculations.Remarkably,mixed with the 1×1 tetragonal metallic phase,we also observe the coexistence of √5×√5 reconstructed insulating phase in the crystal,which not only helps explain the unusual properties of FeS,but also demonstrates the importance of using spatially resolved experimental tools in the study of this compound.

关键词： angle-resolved photoemission with spatially resolution scanning tunneling microscopy iron-based superconductor electronic band structure

electronic Structure and Optical-absorption Properties of C-, N-, and S-doped BiOCl: the First-principles Calculations

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Chinese Journal of Structural Chemistry 2019年第4期38卷 509-523页

作者：姚文志姚建斌张霞马亚豪 Department of Environmental and Municipal Engineering North China University of Water Resources and Electric Power Institute for Computational Materials Science School of Physics and Electronics Henan University Department of Information Engineering North China University of Water Resources and Electric Power

Impurity formation energy, electronic structure, and photocatalytic properties of C-, N-, or S-doped BiOCl are investigated by density-functional theory plus U calculations(DFT + U). Results show that the doping effect of S is better than that of C or N on the tunable photocatalytic activities of BiOCl. At low concentration, S-doped BiOCl systems are the most stable under Bi-rich growth conditions because of their lower impurity-formation energy. Compared with the electronic structures of S-doped BiOCl, C-or N-doped BiOCl have relatively deeper impurity energy levels appearing in their band gap(except Bi_(36)O_(35)NCl_(36)), which may act as photogenerated carrier-recombination centers and reduce photocatalytic activity. At high concentration, S is substituted on the O lattice site system, whereas some S 3p states mix with the valence band; this mixture leads to an obvious band-gap decrease and continuum-state formation above the valence-band edge of BiOCl. Such activity is advantageous to photochemical catalysis response. Compared with pure Bi OCl and a low-concentration S-doped system, a high-concentration S-doped system shows an obvious redshift on the absorption edge and has better photocatalytic O_2 evolution performance.

关键词： BiOCl C N S doping the first-principles electronic structures visible light absorption

electronic Structures and Optical Properties of Ga Doped Single-Layer Indium Nitride

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Chinese Journal of Chemical Physics 2018年第3期31卷 313-317,368页

作者： Zhi-wei Li De-ping Guo Guang-yi Huang Wang-li Tao Man-yi Duan College of Physics and electronic Engineering Sichuan Normal UniversityChengdu 610101China Division of Interfacial Water and Key Laboratory of Interfacial Physics and Technology Shanghai Institute of Applied PhysicsChinese Academy of SciencesShanghai 201800China

electronic structures and optical properties of single-layer In1-xGaxN are studied by employ-ing Heyd-Scuseria-Ernzerh(HSE)method based on the first-principles.The band structure and density of states(DOS)of single-layer In1-xGaxN are calculated,and the band gap ranges from 1.8 eV to 3.8 eV as the ratio x changes,illustrating the potential for the tun-ability of band gap values via Ga doped.We also have investigated optical properties of single-layer In1-xGaxN such as dielectric function,refractive index and absorption coeficient,the main peak of dielectric function spectrum and the absorption edge are found to have a remarkable blue-shift as the concentration of Ga increases.Furthermore,the optical properties of single-layer In1-xGaxN are analyzed based on the band structures and DOS analysis.Such unique optical properties have profound application in nanoelectronics and optical devices.

关键词： electronic structure Optical properties Single-layer In1-xGaxN Heyd-Scuseria-Ernzerh method

electronic Structure and Optical Properties of K2Ti6O13 Doped with Transition Metal Fe or Ag

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Chinese Journal of Chemical Physics 2018年第3期31卷 318-324,368页

作者： Heng-li Chen Hong-yan Lu Yu-min Qi Peng Jin School of Material Science and Engineering Hebei University of TechnologyTianjin 300130China School of Physics and electronic Information Huaibei Normal UniversityHuaibei 235000China

Based on the experimental study of the optical properties of K2Ti6O13 doped with Fe or Ag,their electronic structures and optical properties are studied by the rst-principles method based on the density functional theory(DFT).The calculated optical properties are consis-tent with the experiment results.K2Ti6O13 doped with substitutional Fe or Ag has isolated impurity bands mainly stemming from the hybridization by the Fe 3d states or Ag 4d states with Ti 3d states and O 2p states and the band gap becomes narrower,the absorption edge of K2Ti6O13 thus has a clear red shift and the absorption of visible light can be realized after doping.For Fe-doped K2Ti6O13,the impurity bands are in the middle of the band gap,suggesting that they can be used as a bridge for valence band electrons transition to the conduction band.For Ag-doped K2Ti6O13,the impurity bands form a shallow accep-tor above the valence band and can reduce the recombination rate of photoexcited carriers.The experimental and calculated results are signicant for the development of K2Ti6O13 materials that have absorption under visible light.

关键词： First-principles Doping electronic structures Optical properties

electronic polarization in dipolar organic molecular semiconductors:The case study of 1,2,3,4-tetrafluoro-6,7-dimethylnaphthalene crystal

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Chinese Chemical Letters 2020年第3期31卷 797-800页

作者： Xiaoyi Ma Yuanping Yi Beijing National Laboratory for Molecular Sciences CAS Key Laboratory of Organic SolidsCAS Research/Education Center for Excellence in Molecular SciencesInstitute of ChemistryChinese Academy of SciencesBeijing 100190China University of Chinese Academy Sciences Beijing 100049China

electronic polarization has an important impact on the site energies of charge carriers that play a key role in determining the charge transport in organic semiconductors.Dipolar molecules have strong intermolecular interactions and widespread applications in organic optoelectronics.Howeve r,compared with nonpolar organic semiconductors,electronic polarization for dipolar systems has been rarely studied.Here,taking 1,2,3,4-tetrafluoro-6,7-dimethylnaphthalene as representative,we have calculated the electronic polarization energies of dipolar organic molecular crystals by means of a polarizable forcefield method.Surprisingly,our results point to that the polarization energies for this dipolar system are similar to those of nonpolar systems.In addition,theπ-πstack contributes only about 30%~40%to the total polarization energy,thus the polarization effects along the three dimensions should be treated equally even for the one-dimensional stacking crystals.

关键词： electronic polarization Dipolar Organic semiconductors Charge transport Polarizable force field

Tuning electronic structure of Pt to enhance ethanol electrooxidation performance of SnO_(2) patched ultrathin PtRhNi nanowires

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Rare Metals 2023年第11期42卷 3614-3621页

作者： Xiao-Kun Fan Wen Chen Yun-Hua Zhu Wen-Hui Wang Bay Area Center for Electron Microscopy Songshan Lake Materials LaboratoryDongguan523808China School of Civil and Environmental Engineering Harbin Institute of TechnologyShenzhen518055China State Key Laboratory of Pollution Control and Resources Reuse College of Environmental Science and EngineeringTongji UniversityShanghai200092China

Developing highly active and stable Pt-based nanocatalysts towards the ethanol oxidation reaction(EOR)is still a challenge for the commercialization of direct ethanol fuel cells.Herein,SnO_(2) patched ultrathin PtRhM(... 详细信息

关键词： nanowires electronic structure

A quantitative research on the level of disturbance to secondary signal ports of electronic voltage transformers under the operation of gas‐insulated switchgear

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High Voltage 2022年第1期7卷 165-175页

作者： Qi Wang Chao Fu Fanwu Chu Yue Tong Xiaozhou Wang Guoxiong Ye Xiong Wu Power Industry Electrical Equipment Quality Inspection and Testing Center China Electric Power Research InstituteWuhanChina

The collectors of electronic transformers has the problem of electromagnetic in-compatibility under the operation of disconnecting switches,which limits their wide application in smart grids.To evaluate the maximum level of disturbance that collectors are able to withstand in the stochastic process of switching operation,this work in-troduces a quantitative approach based on limited test measurements,which can quantify the level of disturbance in the signal acquisition ports of electronic voltage transformers(EVT)in different gas‐insulated switchgears(GIS).Based on large numbers of experi-mental statistical data of the true type simulation experimental platform,the Spearman rank correlation coefficient is used to prove that the amplitude of the disturbance voltage pulse at the secondary side port and the breakdown voltage between the primary side fracture approximately satisfy a linear relationship.Subsequently,the quantile regression model is used to quantify and verify the maximum disturbance level of the secondary side port.Moreover,a solution is proposed to tackle the difficulty in obtaining the breakdown voltage at breaks in the GIS substation field applicatvion,under which the quantified maximum disturbance voltage deviation of secondary ports is only−4.34%by com-parison.The research work can further explore the practical value of the measured data in a few tests under GIS substation field conditions and provide references for the sub-sequent revision of EVT‐related standards.

关键词： disturbance operation electronic