Electronic structure of single-crystalline graphene grown on Cu/Ni(111) alloy film

作     者：Xue-Fu Zhang Zhong-Hao Liu Wan-Ling Liu Xiang-Le Lu Zhuo-Jun Li Qing-Kai Yu Da-Wei Shen Xiao-Ming Xie 张学富;刘中灏;刘万领;卢祥乐;李卓君;于庆凯;沈大伟;谢晓明

作者机构：State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information Technology (SIMIT)Chinese Academy of SciencesShanghai 200050China University of Chinese Academy of SciencesBeijing 100049China School of Physical Science and TechnologyShanghai Tech UniversityShanghai 200031China CAS Center for Excellence in Superconducting Electronics (CENSE)Shanghai 200050China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2019年第28卷第8期

页      面：250-253页

核心收录：

学科分类：07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.51772317 11604356 and 11704394) 

主　　题：single-crystal graphene electronic structure Cu/Ni(111) 

摘      要：Graphene with a Dirac cone-like electronic structure has been extensively studied because of its novel transport properties and potential application for future electronic *** epitaxially grown graphene,the process conditions and the microstructures are strongly dependent on various substrate materials with different lattice constants and interface *** angle-resolved photoemission spectroscopy,here we report an investigation of the electronic structure of single-crystalline graphene grown on Cu/Ni(111)alloy film by chemical vapor *** a relatively low growth temperature,graphene on Cu/Ni(111)exhibits a Dirac cone-like dispersion comparable to that of graphene grown on Cu(111).The linear dispersions forming Dirac cone are as wide as 2 e V,with the Fermi velocity of approximately 1.1×10^6 m/*** cone opens a gap of approximately 152 meV at the binding energy of approximately 304 *** findings would promote the study of engineering of graphene on different substrate materials.