Magnetization dynamics and related phenomena in semiconductors with ferromagnetism

作     者：Lin Chen Jianhua Zhao Dieter Weiss Christian H. Back Fumihiro Matsukura Hideo Ohno 

作者机构：Institute of Experimental and Applied Physics University of Regensburg 93049 Regensburg Germany State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China Department of Physics Technical University of Munich Garching b. Munich Germany Center for Innovative Integrated Electronic Systems Tohoku University Sendai 980-0845 Japan Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication Tohoku University Sendai 980-8577 Japan 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2019年第40卷第8期

页      面：20-27页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：the German Science Foundation (DFG) via SFB 1277 for support partially supported by Grant-in-Aids from MEXT and JSPS 

主　　题：(Ga,Mn)As Fe/GaAs ferromagnetic resonance Gilbert damping electric-field effect on magnetism spin-orbit fields 

摘      要：We review ferromagnetic resonance (FMR) and related phenomena in the ferromagnetic semiconductor (Ga,Mn)As and single crystalline Fe/GaAs (001) hybrid structures. In both systems, spin-orbit interaction is the key ingredient for various intriguing phenomena.