Rectifying characteristics and solar-blind photoresponse in β-Ga2O3/ZnO heterojunctions

作     者：Xiao-Fei Ma Yuan-Qi Huang Yu-Song Zhi Xia Wang Pei-Gang Li Zhen-Ping Wu Wei-Hua Tang 马晓菲;黄元琪;支钰崧;王霞;李培刚;吴真平;唐为华

作者机构：State Key Laboratory of Information Photonics and Optical Communications & School of ScienceBeijing University of Posts and Telecommunications 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2019年第28卷第8期

页      面：403-407页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.51572033,61774019,61704153,and 11404029) the Fund from the State Key Laboratory of Information Photonics and Optical Communications(BUPT),China the Fundamental Research Funds for the Central Universities,China 

主　　题：Ga2O3 solar blind photodetector heterojunction self-powered 

摘      要：Heterojunctions composed ofβ-Ga2 O3 and ZnO films are fabricated on sapphire substrates by using the laser molecular beam epitaxy *** heterojunction possesses excellent rectifying characteristics with an asymmetry ratio over *** solar-blind photoresponse effect is also observed in the formed *** photodetector exhibits a self-powered behavior with a fast response speed(rise time and decay time are 0.035 s and 0.032 s respectively)at zero *** obtained high performance can be related to the built-in field driven photogenerated electron-hole separation.