Effect of nucleation layer morphology on crystal quality,surface morphology and electrical properties of AlGaN/GaN heterostructures

作     者：段焕涛 郝跃 张进城 

作者机构：Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor TechnologySchool of Microelectronics Xidian University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2009年第30卷第10期

页      面：68-70页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：supported by the Key Program of National Natural Science Foundation of China(No.60736033) the National Key S&T Special Project(No.2008ZX0101002-003) the National Defense Scientific and Technical Pre-Research Program of China(Nos.51311050112,51308030102,51308040301) 

主　　题：MOCVD AlGaN/GaN nucleation layer 

摘      要：Nucleation layer formation is a key factor for high quality gallium nitride（GaN）growth on a sapphire substrate.We found that the growth rate substantially affected the nucleation layer morphology,thereby having a great impact on the crystal quality,surface morphology and electrical properties of AlGaN/GaN heterostructures on sapphire substrates.A nucleation layer with a low growth rate of 2.5 nm/min is larger and has better coalescence than one grown at a high growth rate of 5 nm/min.AlGaN/GaN heterostructures on a nucleation layer with low growth rate have better crystal quality,surface morphology and electrical properties.