Electrical properties of silver Schottky contacts to ZnO thin films

作     者：李新坤 李清山 梁德春 徐言东 

作者机构：College of Physics and EngineeringQufu Normal University Ludong University Institute of SemiconductorsChinese Academty of Science 

出 版 物：《Optoelectronics Letters》 (光电子快报（英文版）)

年 卷 期：2009年第5卷第3期

页      面：216-219页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

主　　题：ZnO薄膜 肖特基接触 电学性能 脉冲激光沉积 电流电压特性 银 PLD器件 紫外探测器 

摘      要：ZnO thin films are deposited on Al/Si substrates by the pulsed laser deposition(PLD) *** XRD and SEM images of films are *** c-axis oriented ZnO thin films which have uniform compact surface morphology are *** size of surface grains is about 30 *** Schottky barrier ultraviolet detectors with silver Schottky contacts are made on ZnO thin *** current-voltage characteristics are *** ideality contact factor between Ag and ZnO film is 1.22,while the barrier height is 0.908 e *** annealing at 600 oC for 2h,the ideality factor is 1.18 and the barrier height is 0.988 *** the illumination of 325 nm wavelength UV-light,the photocurrent-to-dark current ratios before and after annealing are 140.4 and 138.4 biased at 5 V,*** photocurrents increase more than two orders of magnitude over the dark currents.