Approximate graphical method of solving Fermi level and majority carrier density of semiconductors with multiple donors and multiple acceptors

作     者：Ken K.Chin 

作者机构：Department of Physics and Apollo CdTe Solar Energy Research CenterNew Jersey Institute of Technology 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2011年第32卷第6期

页      面：1-6页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

主　　题：doping compensation Fermi level carrier density graphical method ionization 

摘      要：We present a generic approximate graphical method for determining the equilibrium Fermi level and majority carrier density of a semiconductor with multiple donors and multiple acceptors compensating each other. Simple and easy-to-follow procedures of the graphical method are *** graphically plotting two wrapping step functions facing each other,one for the positive hole-ionized donor and one for the negative electron-ionized acceptor,we have the crossing point that renders the Fermi level and majority carrier *** the graphical method,new equations are derived,such as the carrier compensation proportional to N;/N;,not the widely quoted N;-N;.Visual insight is offered to view not only the result of graphic determination of Fermi level and majority carrier density but also the dominant and critical pair of donors and acceptors in *** graphical method presented in this work will help to guide the design,adjustment,and improvement of the multiply doped *** of this approximate graphical method with previous work on compensation,and with some experimental results,is *** work in the field is proposed.