Physicochemical properties of proton-conducting SmNiO3 epitaxial films
作者机构:School of Material Science and EngineeringTsinghua UniversityBeijing100086China Department of Chemistry and Texas Center for SuperconductivityUniversity of HoustonHoustonTX77204USA Department of Physics and AstronomyUniversity of Texas at San AntonioSan AntonioTX78249USA
出 版 物:《Journal of Materiomics》 (无机材料学学报(英文))
年 卷 期:2019年第5卷第2期
页 面:247-251页
核心收录:
学科分类:0808[工学-电气工程] 0809[工学-电子科学与技术(可授工学、理学学位)] 07[理学] 0817[工学-化学工程与技术] 0806[工学-冶金工程] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学]
基 金:Financial support by National Science Foundation of China Contract No.51672149,51332001 and 51402164 the National Basic Research Program of China(No.2016YFA0300103).AJJ acknowledges support from the R.A.Welch Foundation,Grant#E0024)
主 题:SmNiO_(3) Thin film Transport properties Ionic conductivity Impedance measurements
摘 要:Proton conducting SmNiO_(3)(SNO)thin films were grown on(001)LaAlO_(3)substrates for systematically investigating the proton transport properties.X-ray Diffraction and Atomic Force Microscopy studies reveal that the as-grown SNO thin films have good single crystallinity and smooth surface *** electrical conductivity measurements in air indicate a peak at 473 K in the temperature dependence of the resistance of the SNO films,probably due to oxygen loss on heating.A Metal-Insulator-Transition occurs at 373 K for the films after annealing at 873 K in *** a hydrogen atmosphere(3%H_(2)/97%N_(2)),an anomalous peak in the resistance is found at 685 K on the first heating *** Impedance Spectroscopy studies as a function of temperature indicate that the SNO films have a high ionic conductivity(0.030 S/cm at 773 K)in a hydrogen *** activation energy for proton conductivity was determined to be 0.23 eV at 473-773 K and 0.37 eV at 773e973 K *** findings demonstrate that SNO thin films have good proton conductivity and are good candidate electrolytes for low temperature proton-conducting Solid Oxide Fuel Cells.