New Method for Diagnostics of Ion Implantation Induced Charge Carrier Traps in Micro- and Nanoelectronic Devices

作     者：Mukhtar Ahmed Rana 

作者机构：Physics Department International Islamic University Kashmir Highways Islamabad Pakistan 

出 版 物：《World Journal of Nuclear Science and Technology》 (核科学与技术国际期刊（英文）)

年 卷 期：2012年第2卷第4期

页      面：174-180页

学科分类：1002[医学-临床医学] 100214[医学-肿瘤学] 10[医学] 

主　　题：Semiconductors Ion Implantation Defects Dust Acoustic Waves Deep Level Transient Spectroscopy Electron-Hole Plasma Nanoelectronics 

摘      要：An important problem of defect charging in electron-hole plasma in a semiconductor electronic device is investigated using the analogy of dust charging in dusty plasmas. This investigation yielded physical picture of the problem along with the mathematical model. Charging and discharging mechanism of charge carrier traps in a semiconductor elec-tronic device is also given. Potential applications of the study in semiconductor device technology are discussed. It would be interesting to find out how dust acoustic waves in electron-hole plasma in micro and nanoelectronic devices can be useful in finding out charge carrier trap properties of impurities or defects which serve as dust particles in elec-tron-hole (e-h) plasma. A new method based on an established technique “deep level transient spectroscopy (DLTS) is described here suggesting the determination of properties of charge carrier traps in present and future semiconductor devices by measuring the frequency of dust acoustic waves (DAW). Relationship between frequency of DAW and properties of traps is described mathematically proposing the basis of a technique, called here, dust mode frequency deep level transient spectroscopy (DMF-DLTS).