Superconductivity above 28K in single unit cell FeSe ?lms interfaced with GaO_(2-δ) layer on NdGaO_3(110)

作     者：Haohao Yang Guanyu Zhou Yuying Zhu Guan-Ming Gong Qinghua Zhang Menghan Liao Zheng Li Cui Ding Fanqi Meng Mohsin Rafique Heng Wang Lin Gu Ding Zhang Lili Wang Qi-Kun Xue 

作者机构：State Key Laboratory of Low-Dimensional Quantum Physics Department of Physics Tsinghua University Laboratory for Advanced Materials & Electron Microscopy Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Collaborative Innovation Center of Quantum Matter 

出 版 物：《Science Bulletin》 (科学通报（英文版）)

年 卷 期：2019年第64卷第8期

页      面：490-494页

核心收录：

学科分类：0808[工学-电气工程] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China (11574174, 11774193, 11790311, 11404183, 51522212, 51421002, and 51672307) the National Basic Research Program of China (2015CB921000 and 2014CB921002) the Strategic Priority Research Program of Chinese Academy of Sciences (XDB07030200) 

主　　题：Ga 110 lms interfaced with GaO Superconductivity above 28K in single unit cell FeSe layer on NdGaO3 UC 

摘      要：The discovery of high temperature superconductivity in single unit cell(UC)FeSe on TiO2-δterminated perovskite SrTiO3(001)substrates[1]has attracted intensive attention on searching for new superconducting systems with engineered interfaces as well as understanding the mechanism of interface high temperature superconductivity.