Plasma density measurement and downstream etching of silicon and silicon oxide in Ar/NF3 mixture remote plasma source

作     者：H J YEOM D H CHOI Y S LEE J H KIM D J SEONG S J YOU H C LEE 

作者机构：Korea Research Institute of Standards and Science(KRISS) Daejeon 34113 Republic of Korea Department of Physics Chungnam National University Daejeon 34134 Republic of Korea 

出 版 物：《Plasma Science and Technology》 (等离子体科学和技术（英文版）)

年 卷 期：2019年第21卷第6期

页      面：52-57页

核心收录：

学科分类：08[工学] 0827[工学-核科学与技术] 

基　　金：supported by the Korea Research Institute of Standard and Science (KRISS) the R&D Convergence Program the National Research Council of Science and Technology (NST) of Republic of Korea 

主　　题：remote plasma source electron density cutoff probe downstream etch 

摘      要：In this study,plasma density measurements were performed near the plume region of the remote plasma source (RPS) in Ar/NF3 gas mixtures using a microwave cutoff *** measured plasma density is in the range of 1010-1011 cm-3 in the discharge conditions with RPS powers of 2-4 kW and gas pressures of 0.87-4 *** plasma density decreased with increasing gas pressures and RPS powers under various Ar/NF3 mixing *** decrease in the plasma density measured at the fixed measurement position (plume region) can be understood by the reduction of the electron energy relaxation length with increases in the gas pressures and mixing ratio of NF3/(Ar/NF3).We also performed downstream etching of silicon and silicon oxide films in this *** etch rate of the silicon films significantly increases while the silicon oxide is slightly etched with the gas pressures and *** was also found that the etch rate strongly depends on the wafer position on the processing chamber electrode,and that the etch selectivity reached 96-131 in the discharge conditions of RF powers (3730-4180 W) and gas pressures (3.6-4 Torr).