An Analytical Threshold Voltage Model for Fully Depleted SOI MOSFETs

作     者：李瑞贞 韩郑生 Li Ruizhen;Han Zhengsheng

作者机构：中国科学院微电子研究所北京100029 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2005年第26卷第12期

页      面：2303-2308页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：fully depleted SOI MOSFETs surface potential threshold voltage 

摘      要：A new two-dimensional （2D） analytical model for the threshold-voltage of fully depleted SOI MOSFETs is derived. The 2D potential distribution functions in the active layer of the devices are obtained through solving the 2D Poisson＇s equation. The minimum of the potential at the oxide-Si layer interface is used to monitor the threshold voltage of the SOI MOSFETs. This model is verified by its excellent agreement with MEDICI simulation using SOI MOSFETs with different gate lengths,gate oxide thicknesses,silicon film thicknesses,and channel doping concentrations.