Modulating doping and interface magnetism of epitaxial graphene on SiC(0001)

作     者：周攀 何大伟 

作者机构：Key Laboratory of Luminescence and Optical Information Ministry of Education Institute of Optoelectronic TechnologyBeijing Jiaotong University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2016年第25卷第1期

页      面：770-776页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.61335006,61378073,and 61527817) the Beijing Municipal Science and Technology Committee,China(Grant No.Z151100003315006) Fundamental Research Funds for the Central Universities of Beijing Jiaotong University,China(Grant No.2012YJS123) 

主　　题：graphene interface magnetism doping SiC 

摘      要：On the basis of first principles calculations, we report that the type and density of charge carriers of epitaxial graphene on SiC（O001） can be deliberately controlled by decorating the buffer layer with specific atoms （i.e., F, C1, O, or N）. More importantly, a fine tuning of the doping behavior from intrinsic n-type to charge neutrality to p-type and interface magnetism is achieved via increasing the doping concentration of F atoms on the buffer layer. Our results suggest an interesting avenue to the application of epitaxial graphene in nanoscale electronic and spintronic devices.