Si purification by enrichment of primary Si in Al-Si melt

作     者：余文轴 马文会 吕国强 任永生 薛海洋 戴永年 Wen-zhou YU;Wen-hui MA;Guo-qiang L;Yong-sheng REN;Hai-yang XUE;Yong-nian DAI

作者机构：昆明理工大学冶金与能源工程学院昆明650093 昆明理工大学真空冶金国家工程实验室昆明650093 

出 版 物：《Transactions of Nonferrous Metals Society of China》 (中国有色金属学报（英文版）)

年 卷 期：2013年第23卷第11期

页      面：3476-3481页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project(u1137601)supported by the Joint Funds of the National Natural Science Foundation of China Project(51066003)supported by the National Natural Science Foundation of China 

主　　题：primary silicon A1-Si alloy electromagnetic stirring directional solidification impurity 

摘      要：The primary silicon crystals and AI-Si alloy in hypereutectic A1-Si melt were separated by electromagnetic stirring and directional solidification. Additionally, the distribution feature of impurities in A1-Si system was verified. The results show that the impurities are mainly located in A1-Si alloy and the grain boundaries between the A1-Si alloy and primary silicon. Furthermore, the morphology of primary silicon changes from fish-bone like to plate like and spheroid due to the different Si contents. The amount of impurities decreases with the increasing of Si content in different positions of the sample. The amount of impurities in the bottom of the sample is approximately 10× 10^-6, which is obviously improved compared with the 1248.47 × 10^- 6 in metallurgical Si.