Field emission properties of amorphous GaN ultrathin films fabricated by pulsed laser deposition

作     者：WANG FengYing WANG RuZhi ZHAO Wei SONG XueMei WANG Bo YAN Hui 

作者机构：Laboratory of Thin Film College of Materials Science and Engineering Beijing University of Technology Beijing 100124 China 

出 版 物：《Science in China(Series F)》 (中国科学（F辑英文版）)

年 卷 期：2009年第52卷第10期

页      面：1947-1952页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported by the National Natural Science Foundation of China (Grant No. 10604001) the Beijing Nora Program (Grant No. 2008B10) 

主　　题：field emission amorphous gallium nitride (a-GaN) pulsed laser deposition (PLD) work function 

摘      要：Amorphous gallium nitride （a-GaN） films with thicknesses of 5 and 300 nm are deposited on n-Si （100） substrates by pulsed laser deposition （PLD）, and their field emission （FE） properties are studied. It shows that compared with thicker （300 nm） a-GaN film, better FE performance is obtained on ultrathin （5 nm） a-GaN film with a threshold field of 0.78 V/μm, which is the lowest value ever reported. Furthermore, the current density reaches 42 mA/cm2 when the applied field is 3.72 V/μm. These experimental results unambiguously confirm Binh＇s theoretical analysis （Binh et al. Phys Rev Lett, 2000, 85（4）： 864-867） that the FE performance would be prominently enhanced with the coating of an ultra-thin wide band-gap semiconductor film.