The Structure of Thin Epitaxial Layers of Lead Selenide

作     者：Arif M. Pashaev Omar I. Davarashvili: Zaira G. Akhvlediani: Megi I. Enukashvilit Revaz G. Gulyaev Vladimir P. Zlomanov 

作者机构：National Aviation Academy Baku Azerbaijan Iv. Javakhishili Tbilisi State University Tbilisi Georgia E .Andronikashvili Institute of Physics Tbilisi Georgia M. V. Lomonosov Moscow State University Moscow Russia 

出 版 物：《材料科学与工程（中英文A版）》 (Journal of Materials Science and Engineering A)

年 卷 期：2013年第3卷第2期

页      面：116-121页

学科分类：080903[工学-微电子学与固体电子学] 080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 080501[工学-材料物理与化学] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0803[工学-光学工程] 

主　　题：外延层 硒化铅 结构 薄膜 X-射线 晶格常数 亚晶粒 纳米层 

摘      要：The article deals with the structure of lead selenide epitaxial layers, including nanolayers. The investigation is based on the measurements of the half-width of X-ray diffractions lines. It is shown how the sizes of subgrains-crystallites and the strain in layers vary with the layers thickness. The effect of layer growth rates on the tangential lattice constant was studied.