Accurate surface potential determination in Schottky diodes by the use of a correlated current and capacitance voltage *** to n-InP

作     者：Ali Ahaitouf Abdelaziz Ahaitouf Jean Paul Salvestrini Hussein Srour 

作者机构：Laboratoire Signaux Systemes et ComposantsDGE Faculty of Sciences and TechnologyUniversite Sidi Mohammed Ben AbdellahP.O.Box 2202FES Morocco LIMAO Faculte polydisciplinaire de TazaUniversite Sidi Mohammed Ben Abdellah de FesBP 1223 Taza-GareMorocco Laboratoire Materiaux OptiquesPhotonique et SystemesEA 4423Universite Paul Verlaine-MetzSupelec2 rue E.Belin57070 MetzFrance 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2011年第32卷第10期

页      面：39-43页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

主　　题：Schottky diode interface states surface potential ideality factor barrier height capacitance voltage current measurements 

摘      要：Based on current voltage（I-Vg） and capacitance voltage（C-Vg） measurements,a reliable procedure is proposed to determine the effective surface potential Vd（Vg） in Schottky *** the framework of thermionic emission,our analysis includes both the effect of the series resistance and the ideality factor,even voltage dependent. This technique is applied to n-type indium phosphide（n-InP） Schottky diodes with and without an interfacial layer and allows us to provide an interpretation of the observed peak on the C-Vg *** study clearly shows that the depletion width and the flat band barrier height deduced from C-Vg,which are important parameters directly related to the surface potential in the semiconductor,should be estimated within our approach to obtain more reliable information.