Heterogeneous integration of contact-printed semiconductor nanowires for high-performance devices on large areas

作     者：Carlos García Núñez Fengyuan Liu William Taube Navaraj Adamos Christou Dhayalan Shakthivel Ravinder Dahiya 

作者机构：Bendable Electronics and Sensing Technologies(BEST)GroupSchool of EngineeringUniversity of GlasgowG128QQ GlasgowUK 

出 版 物：《Microsystems & Nanoengineering》 (微系统与纳米工程（英文）)

年 卷 期：2018年第4卷第1期

页      面：208-222页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：This work was supported by EPSRC Engineering Fellowship for Growth–PRINTSKIN(EP/M002527/1) 

主　　题：nanowires printing integration 

摘      要：In this work,we have developed a contact-printing system to efficiently transfer the bottom-up and top-down semiconductor nanowires(NWs),preserving their as-grown features with a good control over their electronic *** the close-loop configuration,the printing system is controlled with parameters such as contact pressure and sliding speed/*** with the dry pre-treatment of the receiver substrate,the system prints electronic layers with high NW density(7 NWs/μm for bottom-up ZnO and 3 NWs/μm for top-down Si NWs),NW transfer yield and *** observed compactly packed(~115 nm average diameters of NWs,with NW-to-NW spacing~165 nm)and well-aligned NWs(90%with respect to the printing direction).We have theoretically and experimentally analysed the role of contact force on NW print dynamics to investigate the heterogeneous integration of ZnO and Si NWs over pre-selected ***,the contact-printing system was used to fabricate ZnO and Si NW-based ultraviolet(UV)photodetectors(PDs)with Wheatstone bridge(WB)configuration on rigid and flexible *** UV PDs based on the printed ensemble of NWs demonstrate high efficiency,a high photocurrent to dark current ratio(10^(4))and reduced thermal variations as a result of inherent self-compensation of WB *** to statistically lesser dimensional variations in the ensemble of NWs,the UV PDs made from them have exhibited uniform response.