Coulomb expansion of a van der Waals C_(60) solid film

作     者：薛其坤 厉建龙 孙牧 陆华 T.Hashizume Y.Hasegawa K.Ohno Y.Kawazoe T.Sakurai H.Kamiyama H.Shinohara 

作者机构：State Key Laboratory for Surface Physics Institute of Physics & Condensed Matter Physics Center Chinese Academy of Sciences Beijing 100080 China Institute for Materials Research Tohoku University Sendai 980-8577 Japan Aomori Public College Aomori 030-01 Japan Chemistry Department Nagoya University Nagoya 464-01 Japan 

出 版 物：《Science China Mathematics》 (中国科学：数学（英文版）)

年 卷 期：2000年第43卷第11期

页      面：1224-1232页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：11301-08102001 National Natural Science Foundation of China,NSFC: 69625608 

主　　题：scanning tunneling microscopy C_(60) Coulomb interaction molecular beam epitaxy charge transfer. 

摘      要：Scanning tunneling microscopy study revealed a van der Waals C60, solid film with 13% room-temperature lattice expansion on the GaAs(001) 2×4 surface. The mechanism involves fundamental Coulomb interaction due to charge transfer from the GaAs substrate. Theoretical calculation determines the charge transfer to be 1.76 electrons per C60 molecule. Oriented at its (110) crystallo-graphic axis this film also distinguishes itself from those formed on all other semiconductor and metal substrates where only the low-energy (111) hexagonal packing of C60 molecules was developed. It is shown that this is due to the one-dimensional confinement effect of the anisotropic substrate, which may have the prospect of controlling crystal growth.