Optimization of Al_2O_3/SiN_x stacked antireflection structures for N-type surface-passivated crystalline silicon solar cells

作     者：吴大卫 贾锐 丁武昌 陈晨 武德起 陈伟 李昊峰 岳会会 刘新宇 

作者机构：Institute of MicroelectronicsChinese Academy of Sciences 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2011年第32卷第9期

页      面：58-61页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Project supported by the State Key Development Program for Basic Research of China(Nos.2006CB604904,2009CB939703) the National Natural Science Foundation of China(Nos.60706023,60676001,90401002,90607022) the Chinese Academy of Sciences(No.YZ0635) the Chinese Academy of Solar Energy Action Plan 

主　　题：antireflection coatings aluminum oxide silicon nitride simulation solar cells 

摘      要：In the case of N-type solar cells,the anti-reflection property,as one of the important factors to further improve the energy-conversion efficiency,has been optimized using a stacked Al_2O_3/SiN_x *** effect of SiN_x layer thickness on the surface reflection property was systematically studied in terms of both experimental and theoretical *** the stacked Al_2O_3/SiN_x layers,results demonstrated that the surface reflection property can be effectively optimized by adding a SiN_x layer,leading to the improvement in the final photovoltaic characteristic of the N-type solar cells.