Reduction of Electron Leakage in a Deep Ultraviolet Nitride Laser Diode with a Double-Tapered Electron Blocking Layer

作     者：Yi-Fu Wang Mussaab I.Niass Fang Wang Yu-Huai Liu 王一夫;Mussaab I.Niass;王芳;刘玉怀

作者机构：National Joint Research Center for Electronic Materials and SystemsZhengzhou UniversityZhengzhou 450001 International Joint Laboratory of Electronic Materials and SystemsZhengzhou UniversityZhengzhou 450001 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2019年第36卷第5期

页      面：67-70页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported by the National Key Research and Development Program under Grant No 2016YFE0118400 the Key Project of Science and Technology of Henan Province under Grant No 172102410062 the National Natural Science Foundation of China under Grant No 61176008 the National Natural Science Foundation of China Henan Provincial Joint Fund Key Project under Grant No U1604263 

主　　题：EBL AlGaN Reduction of Electron Leakage in a Deep Ultraviolet Nitride Laser Diode with a Double-Tapered Electron Blocking Layer 

摘      要：A double-tapered AlGaN electron blocking layer (EBL) is proposed to apply in a deep ultraviolet semiconductor laser diode. Compared with the inverse double-tapered EBL, the laser with the double-tapered EBL shows a higher slope efficiency, which indicates that effective enhancement in the transportation of electrons and holes is achieved. Particularly, comparisons among the double-tapered EBL, the inverse double-tapered EBL, the singletapered EBL and the inverse single-tapered EBL show that the double-tapered EBL has the best performance in terms of current leakage.