Transforming bilayer MoS2 into single-layer with strong photoluminescence using UV-ozone oxidation

作     者：Weitao Su Naresh Komar Steve J. Spencer Ning Dai Debdulal Roy 

作者机构：Institute of Materials Physics Hangzhou Dianzi University Hangzhou 310018 China Ningbo Institute of Materials Technology & Engineering Chinese Academy of Sciences Ningbo 315201 China National Physical Laboratory Hampton Road Teddington Middlesex TWI 10LW UK 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2015年第8卷第12期

页      面：3878-3886页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 083002[工学-环境工程] 0830[工学-环境科学与工程（可授工学、理学、农学学位）] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：support from National Natural Science Foundation of China 中国博士后科学基金 funding by the European Metrology Research Programme (EMRP) Projects NEW02-Raman Metrology funded by the EMRP participating countries within EURAMET and the European Union 

主　　题：single-layer MoS2 W-ozone oxidation photoluminescence enhancement tip-enhanced Raman spectroscopy 

摘      要：The use of single-layer MoS2 in light emitting devices requires innovative methods to enhance its low photoluminescence （PL） quantum yield. In this work, we report that single-layer MoS2 with a strong PL can be prepared by oxidizing bilayer MoS2 using W-ozone oxidation. We show that as compared to mechanically-exfoliated single-layer MoS2, the PL intensity of the single-layer MoS2 prepared by W-ozone oxidation is enhanced by 20-30 times. We demonstrate that the PL intensity of both neutral excitons and trions （charged excitons） can be greatly enhanced in the oxidized MoS2 samples. These results provide novel insights into the PL enhancement of single-layer MoS2.