PbS Nanostructures Thin Films by in situ PbS：Ni and PbS：Cd-Doping

作     者：Salvador Rosas Castilla Marcial Zamora Tototzintlel Rey Baltazar Lepez Flores Leslie Chaltel Lima Oscar Portillo Moreno 

作者机构：Faculty of Chemistry Autonomous University of Puebla (UAP) Puebla Mexico Faculty of Electronics Autonomous University of Puebla (UAP) Puebla Mexico 

出 版 物：《材料科学与工程（中英文A版）》 (Journal of Materials Science and Engineering A)

年 卷 期：2013年第3卷第5期

页      面：305-314页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 081202[工学-计算机软件与理论] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

主　　题：PBS 硫化铅 纳米结构薄膜 兴奋剂 X-射线衍射 Ni 原位 掺杂浓度 

摘      要：PbS: Ni and PbS: Cd nanocrystalline films were prepared by chemical bath on glass substrates at deposition T = 80. Different Ni-Cd-doping levels were obtained changing the volume of the Ni an Cd-reagent-solution into the PbS growing solution. Measurements were carried out to characterize the semiconductor, such as X-ray diffraction (XRD) and optical absorption (OA). The morphological changes of the layers were analyzed using scanning electron microscopy (SEM). Diffraction X-ray spectra PbS: Ni and PbS: Cd displayed peaks at 2θ = 26.00, 30.07, 43.10, 51.00 and 53.48, indicating growth on the zinc blende face. The grain size determined by X-rays diffraction of the undoped samples, was found ~37 nm, whereas with the doped sample was 32-5 nm. PbS: Ni forbidden band gap energy (Eg) shift disclose a shift in the range of 1.4-2.4 V and PbS: Cd energy was estimated to be 0.15-0.5 eV. Gibbs free energy calculation for the Cu doping PbS is also included.